Product Summary

The 2N5551B011 is an Amplifier Transistor.

Parametrics

2N5551B011 absolute maximum ratings: (1)Collector - Emitter Voltage, VCEO: 140 to 160 Vdc; (2)Collector - Base Voltage, VCBO: 160 to 180 Vdc; (3)Emitter - Base Voltage, VEBO: 6.0 Vdc; (4)Collector Current - Continuous, IC: 600 mAdc; (5)Total Device Dissipation, PD: 625mW; (6)Operating and Storage Junction Temperature Range, TJ, Tstg: -55 to +150℃.

Features

2N5551B011 features: (1)Pb-Free Packages are Available; (2)Device Marking: Device Type.

Diagrams

2N5551B011 circuit diagram

2N5550
2N5550
ON Semiconductor
Transistors Bipolar (BJT) 600mA 160V NPN
Data Sheet
0-1: $0.15
1-25: $0.14
25-100: $0.13
100-250: $0.13
2N5550_D27Z
2N5550_D27Z
Fairchild Semiconductor
Transistors Bipolar (BJT)
Data Sheet
Negotiable 
2N5550_D28Z
2N5550_D28Z
Fairchild Semiconductor
Transistors Bipolar (BJT)
Data Sheet
Negotiable 
2N5550_D75Z
2N5550_D75Z
Fairchild Semiconductor
Transistors Bipolar (BJT)
Data Sheet
Negotiable 
2N5550BU
2N5550BU
Fairchild Semiconductor
Transistors Bipolar (BJT) NPN Si Transistor Epitaxial
Data Sheet
0-1: $0.20
1-25: $0.18
25-100: $0.12
100-250: $0.09
2N5550G
2N5550G
ON Semiconductor
Transistors Bipolar (BJT) 600mA 160V NPN
Data Sheet
0-1: $0.21
1-25: $0.14
25-100: $0.11
100-500: $0.06