Product Summary

The G80N60 is an Insulated Gate Bipolar Transistor. It provides low conduction and switching losses. The G80N60 is designed for applications such as motor control and general inverters where high speed switching is a required feature. The applications of the G80N60 include: AC & DC motor controls, general purpose inverters, robotics, and servo controls.

Parametrics

G80N60 absolute maximum ratings: (1)VCES Collector-Emitter Voltage: 600 V; (2)VGES Gate-Emitter Voltage: ± 20 V; (3)IC Collector Current @ TC = 25℃: 80 A; Collector Current @ TC = 100℃: 40 A; (4)ICM Pulsed Collector Current: 220 A; (5)IF Diode Continuous Forward Current @ TC = 100℃: 25 A; (6)IFM Diode Maximum Forward Current: 280 A; (7)PD Maximum Power Dissipation @ TC = 25℃: 195 W; Maximum Power Dissipation @ TC = 100℃: 78 W; (8)TJ Operating Junction Temperature: -55 to +150 ℃; (9)Tstg Storage Temperature Range: -55 to +150 ℃; (10)TL Maximum Lead Temp. for Soldering Purposes,/8” from Case for 5 Seconds: 300 ℃.

Features

G80N60 features: (1)High speed switching; (2)Low saturation voltage: VCE(sat) = 2.1 V @ IC = 40A; (3)High input impedance; (4)CO-PAK, IGBT with FRD: trr = 50ns (typ.).

Diagrams

G80N60 diagram