Product Summary

The BSM150GB120DN2 is an IGBT Power Module.

Parametrics

BSM150GB120DN2 absolute maximum ratings: (1)Collector-emitter voltage VCE: 1200 V; (2)Collector-gate voltage, VCGR: 1200 V; (3)Gate-emitter voltage VGE: ± 20V; (4)DC collector current, IC: 210A;(5)Pulsed collector current, tp = 1 ms, ICpuls: 420A; (6)Pwer dissipation per IGBT: 1400W; (7)Chip temperature Tj: + 150 ℃; (8)Storage temperature Tstg: -55 to + 150℃; (9)Thermal resistance, chip case RthJC≤ 0.09 K/W; (10)Diode thermal resistance, chip case RthJCD≤ 0.18K/W; (11)Insulation test voltage, t = 1min. Vis: 2500 Vac; (12)Creepage distance: 20 mm; (13)Clearance: 11mm; (14)DIN humidity category, DIN 40 040: F sec.

Features

BSM150GB120DN2 features: (1)Half-bridge; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.

Diagrams

<IMG border=0 alt="BSM150GB120DN2 circuit diagram" src="http://www.seekic.com/uploadfile/ic-mfg/201283025319870.jpg">

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSM150GB120DN2
BSM150GB120DN2
Infineon Technologies
IGBT Modules 1200V 150A DUAL
Data Sheet
0-1: $96.31
1-10: $86.68
BSM150GB120DN2_E3166
BSM150GB120DN2_E3166
Infineon Technologies
IGBT Modules N-CH 1.2KV 210A
Data Sheet
0-5: $108.98
5-10: $98.08
BSM150GB120DN2F_E3256
BSM150GB120DN2F_E3256
Infineon Technologies
IGBT Modules IGBT 1200V 150A
Data Sheet
0-6: $97.80
6-10: $88.20
BSM150GB120DN2F
BSM150GB120DN2F
Infineon Technologies
IGBT Modules IGBT 1200V 150A
Data Sheet
0-6: $88.80
6-10: $79.80
BSM150GB120DN2E3166
BSM150GB120DN2E3166
Other

Data Sheet
Negotiable