Product Summary

The MDP8N60 is an N-channel MOSFET. It is suitable device for SMPS, high Speed switching and general purpose applications. The applications of the MDP8N60 include: Power Supply, PFC, High Current, High Speed Switching.

Parametrics

MDP8N60 absolute maximum ratings: (1)Drain-Source Voltage VDSS: 600 V; (2)Gate-Source Voltage VGSS: ±30 V; (3)Continuous Drain Current ID: 8.0 A at TC=25℃, 4.9 A at TC=100℃ ; (4)Pulsed Drain Current IDM: 32 A; (5)Power Dissipation PD: 144 W at TC=25℃, 1.15W/℃ at Derate above 25 ℃; (6)Repetitive Avalanche Energy EAR: 14.4 mJ; (7)Peak Diode Recovery dv/dt: 4.5 V/ns; (8)Single Pulse Avalanche Energy EAS: 320 mJ; (9)Junction and Storage Temperature Range TJ, Tstg: -55~150 ℃.

Features

MDP8N60 features: (1)VDS = 600V; (2)ID =8.0A @ VGS = 10V; (3)RDS(ON) ≤ 0.95Ω @ VGS = 10V.

Diagrams

MDP8N60 diagaram